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This is advantageous for memory applications as it provides faster and more energy efficient switching. The reduced symmetry of the TMD interface enables current-induced torques to switch magnetic layers which are magnetized perpendicular to the film. We're currently studying materials such as WTe 2 and MoTe 2 to study the role of symmetry and the spin-dependent Berry curvature in determining the spin-orbit torques present in these systems.
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We've recently shown theoretically and experimentally that the spin-orbit coupling in ferromagnets enables the flow of novel spin currents in these materials, which may have important implications for the behavior of ferromagnet-heavy metal bilayer systems.ĭevices based on spin-orbit torques can also utilize unique properties of quantum materials such as topological insulators and two-dimensional transition metal dichalcogenides. We've developed models of the dominant components of these torques, referred to as "field-like" and "damping-like" torques. Applying an electric current in the plane of the bilayer results in torques on the magnetization which can lead to magnetic dynamics and switching. Systems which exhibit substantial spintronic effects due to spin-orbit coupling are typically bilayers composed of thin films of a heavy metal and a ferromagnet. This provides the opportunity for more energy efficient electrical manipulation of magnetic order. Spin-orbit coupling enables the flow of angular momentum between the spin angular momentum of the electronic system and the mechanical angular momentum of the lattice. Spin-orbit coupling has recently been shown to provide a new route to novel spintronic devices. The interplay of charge and spin transport and magnetic order additionally opens the way toward other applications such as memristor devices for next-generation computing. Spin transfer torque provides a means of electrically changing the magnetic configuration of a device, thereby acting as a writing mechanism for magnetic memory. In this case, charge and spin flow can change the state of the magnetization. A converse effect is known as spin transfer torque. This effect is utilized in magnetic sensors, and is used in read heads in modern hard disk drives. Magnetoresistance enables a measurement of device resistance to reveal the magnetic orientation. The state of the magnetization influences charge and spin current through an effect known as magnetoresistance. Spintronic devices typically include materials with magnetic ordering, such as ferromagnets or antiferromagnets. The spin degree of freedom can provide a basis for next-generation electronic devices. The importance of the residual-spin-other-orbit interaction is discussed, and it is shown that ignoring the form of this interaction may lead to a large variation in the coupling constant within a configuration.Schematic of device structure designed to utilize novel spin current generation in a ferromagnet (FM) to achieve electrical switching of a perpendicularly magnetized FM layer An explanation for this disagreement is suggested, based on the noded nature of the outer-electron radial wave functions for these atoms.
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For the 3 p and 4 p shell atoms, the calculated coupling constants based on the exact theory and on the expression both tend to lie below the experimental values. The exchange terms discussed in the earlier paper make a contribution to the coupling constant of the same sign and order of magnitude as the ordinary shielding terms. Excellent agreement of this theory with experiment is obtained for the 2 p and 3 d shell ions, while calculations using the familiar expression for the coupling constant lie 10 to 20 % too high. The calculations are based on a theory developed in a previous paper.
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Results of calculations of the spin-orbit coupling constant for 2 p, 3 p, 4 p, and 3 d shell ions and atoms are presented.